2018-08-16
07:02 |
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2018-08-16
07:02 |
Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors
/ Verbitskaya, E (Ioffe Phys. Tech. Inst.) ; Eremin, V (Ioffe Phys. Tech. Inst.) ; Zabrodskii, A (Ioffe Phys. Tech. Inst.) ; Li, Z (Brookhaven Natl. Lab.) ; Luukka, P (Helsinki Inst. of Phys.)
Recent experiments on silicon detectors developed by the CERN-RD50 collaboration for very high luminosity colliders showed a significant enhancement of the collected charge $Q_c$ in Si detectors irradiated to the fluence of $10^{15} – 10^{16} \ \rm{n}_{eq}/cm^2$ if the devices were operated at high bias voltage. The enhancement arises from carrier avalanche multiplication in high electric field of the junction. [...]
2013 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 730 (2013) 66-72
In : 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italie, 9 - 12 Oct 2012, pp.66-72
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2018-08-16
07:02 |
A charge collection study with dedicated RD50 charge multiplication sensors
/ Betancourt, C (Freiburg U.) ; Barber, T (Freiburg U.) ; Hauser, M (Freiburg U.) ; Jakobs, K (Freiburg U.) ; Kuehn, S (Freiburg U.) ; Parzefall, U (Freiburg U.) ; Wonsak, S (Freiburg U. ; Liverpool U.)
This study investigates the charge collection efficiency of silicon strip detectors, produced by MICRON Semiconductor Co., Ltd. within the CERN RD50 collaboration, designed specifically to understand the effect of design parameters on the onset and magnitude of charge multiplication. [...]
2013 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 730 (2013) 62-65
In : 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italie, 9 - 12 Oct 2012, pp.62-65
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2018-08-16
07:02 |
Investigation of electric field and charge multiplication in silicon detectors by Edge-TCT
/ Kramberger, G (Stefan Inst., Ljubljana) ; Cindro, V (Stefan Inst., Ljubljana) ; Mandić, I (Stefan Inst., Ljubljana) ; Mikuž, M (Stefan Inst., Ljubljana) ; Zavrtanik, M (Stefan Inst., Ljubljana) ; Milovanović, M (Stefan Inst., Ljubljana)
A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 $\mu \rm{m}$ was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. [...]
2009 - 9 p.
- Published in : 10.1109/NSSMIC.2009.5402213
In : IEEE Nuclear Science Symposium And Medical Imaging Conference, Orlando, FL, USA, 25 Oct - 31 Oct 2009, pp.1740-1748
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2018-08-16
07:02 |
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2018-08-16
07:02 |
Electric field modeling in heavily irradiated silicon detectors based on Edge-TCT measurements
/ Kramberger, Gregor (Stefan Inst., Ljubljana) ; Cindro, V (Stefan Inst., Ljubljana) ; Mandić, I (Stefan Inst., Ljubljana) ; Mikuž, M (Stefan Inst., Ljubljana ; Ljubljana U.) ; Milovanović, M (Stefan Inst., Ljubljana) ; Zavrtanik, M (Stefan Inst., Ljubljana)
Velocity profiles in heavily irradiated silicon micro-strips detector were investigated by Edge-TCT. The parameters of a simple electric field model assuming two space charge regions at each side of the detector and neutral bulk in-between were extracted from the measurements..
2013 - 10 p.
- Published in : PoS Vertex2012 (2013) 022
Fulltext: PDF; External link: POS
In : Vertex 2012, Jeju, Republic Of Korea, 16 - 21 Sep 2012, pp.022
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2018-08-15
08:13 |
Radiation hardness of silicon—a challenge for defect engineering
/ Stahl, J (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstroem, G (Hamburg U., Inst. Exp. Phys. II) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Thermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). [...]
2003 - 5 p.
- Published in : Physica B 340 (2003) 705-709
In : 22nd International Conference on Defects in Semiconductors, Aarhus, Denmark, 28 Jul - 1 Aug 2003, pp.705-709
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2018-08-15
08:13 |
Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
/ Pintilie, I (Bucharest, Nat. Inst. Mat. Sci. ; Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Kramberger, G (DESY) ; Lindstroem, G (Hamburg U., Inst. Exp. Phys. II) ; Li, Z (DESY) ; Stahl, J (Brookhaven Natl. Lab.)
Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the annealing experiments, are discussed. [...]
2003 - 5 p.
- Published in : Physica B 340 (2003) 578-582
In : 22nd International Conference on Defects in Semiconductors, Aarhus, Denmark, 28 Jul - 1 Aug 2003, pp.578-582
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2018-08-15
08:13 |
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2018-08-15
08:13 |
A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors
/ Petasecca, Marco (Perugia U. ; INFN, Perugia) ; Moscatelli, Francesco (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, Daniele (Perugia U. ; INFN, Perugia) ; Pignatel, Giorgio Umberto (Perugia U. ; INFN, Perugia) ; Scarpello, Carlo (Perugia U.) ; Caprai, Giovanni (Perugia U.)
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. [...]
2005 - 4 p.
- Published in : 10.1109/NSSMIC.2005.1596601
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