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1.
Radiation hardness of different silicon materials after high-energy electron irradiation / Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II)
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated..
2004 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 530 (2004) 110-116

In : 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116
2.
Lithium ion irradiation effects on epitaxial silicon detectors / Candelori, A (INFN, Padua ; Padua U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Schramm, A (Hamburg U., Inst. Exp. Phys. II) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) ; Wyss, J (Cassino U. ; INFN, Pisa)
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. [...]
2004 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1766-1772
In : 13th IEEE-NPSS Real Time Conference 2003, Montreal, Canada, 18 - 23 May 2003, pp.1766-1772
3.
Development of radiation hard semiconductor : devices for very high luminosity colliders / Mauro De Palma, D (INFN, Bari) ; Radicci, V (INFN, Bari) ; Lozano, M (Barcelona, Autonoma U.) ; Campabadal, F (Barcelona, Autonoma U.) ; Ullán, M (Barcelona, Autonoma U.) ; Martínez, C (Barcelona, Autonoma U.) ; Fleta, C (Barcelona, Autonoma U.) ; Key, M (Barcelona, Autonoma U.) ; Raffí, J M (Barcelona, Autonoma U.) ; Kordas, G (Democritos Nucl. Res. Ctr.) et al.
CERN-LHCC-2002-003 ; LHCC-P-6.
- 2002. - 36 p.
Full text - CERN library copies
4.
Radiation hardness of silicon—a challenge for defect engineering / Stahl, J (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstroem, G (Hamburg U., Inst. Exp. Phys. II) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Thermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). [...]
2003 - 5 p. - Published in : Physica B 340 (2003) 705-709
In : 22nd International Conference on Defects in Semiconductors, Aarhus, Denmark, 28 Jul - 1 Aug 2003, pp.705-709
5.
Radiation Hardness of Silicon Detectors for Applications in High-Energy Physics Experiments / Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Kuhnke, M (Hamburg U., Inst. Exp. Phys. II) ; Lindström, G (Hamburg U., Inst. Exp. Phys. II) ; Moll, M (CERN)
An overview of the radiation damage induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. The present knowledge on the deterioration of the detector performance caused by irradiation with neutrons and high energetic protons is described leading to an appropriate modeling of the macroscopic parameters under irradiation, i.e. [...]
2000 - 14 p. - Published in : J. Optoelectron. Adv. Mat.: 2 (2000) , no. 5, pp. 575-588 External links: Fulltext; Fulltext
6.
Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion” / Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindström, G (Hamburg U., Inst. Exp. Phys. II) ; Stahl, J (Hamburg U., Inst. Exp. Phys. II)
Radiation-induced defects in silicon diodes were investigated after exposure to high doses of $\rm{Co}^{60}$-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. [...]
2003 - 3 p. - Published in : Appl. Phys. Lett. 82 (2003) 2169-2171
7.
Neutrino-electron scattering : progress with the CHARM II detector / CHARM II Collaboration
Geneva : CERN, 1988 - 12 p. Fulltext: PDF;
In : 2ème Rencontres de Physique de la Vallée d'Aoste : Results and Perspectives in Particle Physics, La Thuile, Italy, 26 Feb - 5 Mar 1988, pp.511-522 - CERN library copies
8.
Second-order generation of point defects in highly irradiated float zone silicon—annealing studies / Pintilie, I (Bucharest, Nat. Inst. Mat. Sci. ; Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Kramberger, G (DESY) ; Lindstroem, G (Hamburg U., Inst. Exp. Phys. II) ; Li, Z (DESY) ; Stahl, J (Brookhaven Natl. Lab.)
Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the annealing experiments, are discussed. [...]
2003 - 5 p. - Published in : Physica B 340 (2003) 578-582
In : 22nd International Conference on Defects in Semiconductors, Aarhus, Denmark, 28 Jul - 1 Aug 2003, pp.578-582
9.
Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes / Lange, Jörn (Hamburg U., Inst. Exp. Phys. II) ; Becker, Julian (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, Eckhart (Hamburg U., Inst. Exp. Phys. II) ; Klanner, Robert (Hamburg U., Inst. Exp. Phys. II) ; Lindström, Gunnar (Hamburg U., Inst. Exp. Phys. II)
Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an option to overcome the strong trapping of charge carriers in the innermost tracking region of future Super-LHC detectors. Charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and $\alpha$-particles with optional absorbers) were used to locate the CM region close to the p$^+$-implantation. [...]
arXiv:1007.4735.- 2010 - 11 p. - Published in : Nucl. Instrum. Meth. A 622 (2010) 49-58 External link: Preprint
10.
Experimental Evidence For Double - Pomeron Exchange At Isr Energies / De Kerret, H (CERN) ; Kwak, N (CERN) ; Nagy, E (CERN) ; Orr, R S (CERN) ; Regler, Meinhard (CERN) ; Schmidt-Parzefall, W (CERN) ; Schubert, Klaus R (CERN) ; Winter, Klaus (CERN) ; Brandt, A (Hamburg U., Inst. Exp. Phys. II) ; Büsser, F W (Hamburg U., Inst. Exp. Phys. II) et al.
PRINT-77-0477-CERN.- Geneva : CERN, 1977 - Published in : Phys. Lett. B 68 (1977) 385-8 Fulltext: PDF;

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