CERN Accélérateur de science

CERN Published Articles

Derniers ajouts:
2018-08-22
06:28
The Hi-GAL compact source catalogue – I. The physical properties of the clumps in the inner Galaxy (−71$_{.}^{\circ}$0 < ℓ < 67$_{.}^{\circ}$0) / Elia, Davide (INAF, Rome) ; Molinari, S (INAF, Rome) ; Schisano, E (INAF, Rome) ; Pestalozzi, M (INAF, Rome) ; Pezzuto, S (INAF, Rome) ; Merello, M (INAF, Rome) ; Noriega-Crespo, A (Baltimore, Space Telescope Sci.) ; Moore, T J T (Liverpool John Moores U., ARI) ; Russeil, D (Marseille, Lab. Astrophys.) ; Mottram, J C (Heidelberg, Max Planck Inst. Astron.) et al.
Hi-GAL (Herschel InfraRed Galactic Plane Survey) is a large-scale survey of the Galactic plane, performed with Herschel in five infrared continuum bands between 70 and 500 μm. We present a band-merged catalogue of spatially matched sources and their properties derived from fits to the spectral energy distributions (SEDs) and heliocentric distances, based on the photometric catalogues presented in Molinari et al., covering the portion of Galactic plane −71 ∘. [...]
2017 - 44 p. - Published in : Mon. Not. R. Astron. Soc. 471 (2017) 100-143

Notice détaillée - Notices similaires
2018-08-22
06:27
Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors / Klingenberg, R (Dortmund U.) ; Krasel, O (Dortmund U.) ; Mass, M (Dortmund U.) ; Dobos, D (Dortmund U.) ; Gossling, C (Dortmund U.) ; Wunstorf, R (Dortmund U.)
The Transient Current Technique (TCT) is used to measure pulse shapes of charge collection and to derive trapping times in irradiated silicon pad detectors in a fluence range up to $10^{15} \ n_{\rm{eq}} \rm{cm}^{-2}$. Simulations of electrical fields and charge collection mechanisms compared to the measurements of the TCT method allow to derive predictions of the charge collection efficiency. [...]
2006 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 568 (2006) 34-40

Notice détaillée - Notices similaires
2018-08-22
06:27
Czochralski silicon radiation detectors / Bates, A G (Glasgow U.)
An overview is presented of some of the recent results concerning the suitability of Czochralski silicon to High Energy Physics (HEP) radiation detectors. It has been shown that an elevated oxygen concentration within the bulk silicon of detectors offers increased radiation hardness to charged particle radiation. [...]
2006 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 569 (2006) 73-76
In : 14th International Workshop on Vertex Detectors, Nikko, Japan, 7 - 11 Nov 2005, pp.73-76

Notice détaillée - Notices similaires
2018-08-22
06:27
Recent results from RD50 / Bortoletto, D (Purdue U.) /RD50
The luminosity upgrade of the large hadron collider (SLHC) at CERN will require the innermost layers of the vertex detectors to achieve excellent performances up to fluences of about $10^{16}$ hadrons cm$^{-2}$. New solid state detectors are currently being developed by the CERN RD50 collaboration. [...]
2006 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 569 (2006) 69-72

In : 14th International Workshop on Vertex Detectors, Nikko, Japan, 7 - 11 Nov 2005, pp.69-72

Notice détaillée - Notices similaires
2018-08-22
06:27
Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors / Petasecca, M (Perugia U. ; INFN, Perugia) ; Moscatelli, F (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, D (Perugia U. ; INFN, Perugia) ; Pignatel, G U (Perugia U. ; INFN, Perugia)
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of $1 \times 10^{16} \rm{n}/cm^2$. In this work two numerical simulation models will be presented for p-type and n-type silicon detectors, respectively. [...]
2006 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 53 (2006) 2971-2976

Notice détaillée - Notices similaires
2018-08-22
06:27
Technology development of p-type microstrip detectors with radiation hard p-spray isolation / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.)
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. [...]
2006 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365

Notice détaillée - Notices similaires
2018-08-22
06:27
Defect characterization in silicon particle detectors irradiated with Li ions / Scaringella, M (INFN, Florence ; U. Florence (main)) ; Menichelli, D (INFN, Florence ; U. Florence (main)) ; Candelori, A (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Bruzzi, M (INFN, Florence ; U. Florence (main))
High Energy Physics experiments at future very high luminosity colliders will require ultra radiation-hard silicon detectors that can withstand fast hadron fluences up to $10^{16}$ cm$^{-2}$. In order to test the detectors radiation hardness in this fluence range, long irradiation times are required at the currently available proton irradiation facilities. [...]
2006 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 53 (2006) 589-594

Notice détaillée - Notices similaires
2018-08-22
06:27
Radiation-hard detectors for very high luminosity colliders / Candelori, A (INFN, Padua) /RD50
Recent results from the CERN RD50 Collaboration for the development of radiation-hard detectors for the LHC upgrade (Super-LHC) and in general for very high luminosity colliders are reported and discussed. Particularly, the attention is focused on Czochralski and Magnetic Czochralski silicon, thin detectors and p-type substrate devices..
2006 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 560 (2006) 103-107

Notice détaillée - Notices similaires
2018-08-21
09:32
First double-sided 3-D detectors fabricated at CNM-IMB / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Bates, R (Glasgow U.) ; Fleta, C (Glasgow U.) ; Pennicard, D (Glasgow U.)
The first results on double-sided three-dimensional (3-D) silicon radiation detectors are reported in this paper. The detector consists of a three-dimensional array of electrodes that penetrate into the detector bulk with the anode and cathode electrodes etched from opposite sides of the substrate. [...]
2008 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 592 (2008) 38-43

Notice détaillée - Notices similaires
2018-08-21
09:32
Recent results from CERN RD50 collaboration / Kramberger, G (Stefan Inst., Ljubljana) /RD50
The results and the current status of the CERN RD50 collaboration are presented. The device design and material engineering leading to more radiation hard detectors are discussed and a survey of radiation damage parameters for different silicon materials is given..
2007 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 583 (2007) 49-57

Notice détaillée - Notices similaires